JOPSS - Search Results

Search Results: Records 1-4 displayed on this page of 4

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Journal Articles

Investigation of single-event damages on silicon carbide (SiC) power MOSFETs

Mizuta, Eiichi*; Kuboyama, Satoshi*; Abe, Hiroshi; Iwata, Yoshiyuki*; Tamura, Takashi*

IEEE Transactions on Nuclear Science, 61(4), p.1924 - 1928, 2014/08

https://doi.org/10.1109/TNS.2014.2336911

Times Cited Count：95 Percentile：99.22(Engineering, Electrical & Electronic)

Journal Articles

Single event research at JAERI

Hirao, Toshio; Laird, J. S.; Mori, Hidenobu; Onoda, Shinobu; Wakasa, Takeshi; Yamakawa, Takeshi; Abe, Hiroshi; Ito, Hisayoshi

Proceedings of 5th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, p.161 - 166, 2002/10

no abstracts in English

Journal Articles

Single event transient in optoelectric devices

Laird, J. S.; Hirao, Toshio; Onoda, Shinobu*; Mori, Hidenobu*; Ito, Hisayoshi

Proceedings of 5th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, p.155 - 160, 2002/10

no abstracts in English

Journal Articles

The Irradiation facilities for the radiation tolerance testing of semiconductor devices for space use in Japan

Saido, Masahiro; Fukuda, Mitsuhiro; Arakawa, Kazuo; Tajima, Satoshi; Sunaga, Hiromi; Yotsumoto, Keiichi; Kamiya, Tomihiro; Tanaka, Ryuichi; Hirao, Toshio; Nashiyama, Isamu; et al.

Proceedings of 1999 IEEE Nuclear and Space Radiation Effects Conference, p.117 - 122, 1999/00

no abstracts in English